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NXH040P120MNF1PTG
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 30 A, 1.2 kV, 0.042 ohm, Module
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18 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$203.240 (S$221.5316) |
| 5+ | S$177.830 (S$193.8347) |
| 10+ | S$147.350 (S$160.6115) |
| 50+ | S$132.100 (S$143.989) |
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S$203.24 (S$221.53 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH040P120MNF1PTG
Order Code3973634
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id30A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.042ohm
No. of Pins18Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.81V
Power Dissipation74W
Operating Temperature Max175°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
30A
Drain Source On State Resistance
0.042ohm
Rds(on) Test Voltage
20V
Power Dissipation
74W
Product Range
-
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
No. of Pins
18Pins
Gate Source Threshold Voltage Max
2.81V
Operating Temperature Max
175°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.09