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NXV08V110DB1
MOSFET Transistor, 80 V, 1700 µohm, 10 V, 4 V
Image is for illustrative purposes only. Please refer to product description.
44 In Stock
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44 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 44+ | S$30.350 (S$33.0815) |
Price for:Tube of 1
Minimum: 44
Multiple: 44
S$1,335.40 (S$1,455.59 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXV08V110DB1
Order Code3617528
Technical Datasheet
Channel Type-
Continuous Drain Current Id-
Drain Source Voltage Vds80V
Drain Source On State Resistance1700µohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation-
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
-
Drain Source Voltage Vds
80V
Rds(on) Test Voltage
10V
Power Dissipation
-
Product Range
-
Continuous Drain Current Id
-
Drain Source On State Resistance
1700µohm
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
175°C
SVHC
No SVHC (15-Jan-2018)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1