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BSM600D12P3G001
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 600 A, 1.2 kV, Module
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Manufacturer Standard Lead Time: 25 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$2,770.250 (S$3,019.5725) |
Price for:Each
Minimum: 1
Multiple: 1
S$2,770.25 (S$3,019.57 inc GST)
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Product Information
ManufacturerROHM
Manufacturer Part NoBSM600D12P3G001
Order Code3573233
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id600A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max5.6V
Power Dissipation2.45kW
Operating Temperature Max150°C
Product Range-
SVHCLead (23-Jan-2024)
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
600A
Drain Source On State Resistance
-
No. of Pins
-
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
150°C
SVHC
Lead (23-Jan-2024)
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
-
Power Dissipation
2.45kW
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.28