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QS6M3TR
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 1.5 A, 1.5 A, 0.17 ohm
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3,117 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$0.523 (S$0.5701) |
| 500+ | S$0.435 (S$0.4742) |
| 1500+ | S$0.427 (S$0.4654) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
S$52.30 (S$57.01 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoQS6M3TR
Order Code1525473RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id1.5A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.17ohm
Continuous Drain Current Id N Channel1.5A
Continuous Drain Current Id P Channel1.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.17ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.17ohm
Transistor Case StyleTSMT
Gate Source Threshold Voltage Max1.5V
No. of Pins6Pins
Power Dissipation Pd900mW
Power Dissipation N Channel900mW
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
Product Overview
The QS6M3TR is a N/P-channel MOSFET designed as low ON-resistance device by the micro-processing technologies useful for wide range of applications. This device is suitable for use with coin processing machines, handy type digital multi-meter, PLC (programmable logic controller) AC servo, network attached storage and DVR/DVS applications.
- 2.5V Drive
- Fast switching speed
- Small surface-mount package
- Low ON-resistance
- Built-in G-S protection diode
Applications
Industrial, Power Management, Portable Devices, Motor Drive & Control
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
1.5A
On Resistance Rds(on)
0.17ohm
Continuous Drain Current Id P Channel
1.5A
Drain Source On State Resistance N Channel
0.17ohm
Drain Source On State Resistance P Channel
0.17ohm
Gate Source Threshold Voltage Max
1.5V
Power Dissipation Pd
900mW
Power Dissipation P Channel
1.25W
Product Range
-
Automotive Qualification Standard
-
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
1.5A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
TSMT
No. of Pins
6Pins
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000056