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SP8M4FU6TB
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 7 A, 7 A, 0.012 ohm
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerROHM
Manufacturer Part NoSP8M4FU6TB
Order Code1525587
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel7A
Continuous Drain Current Id P Channel7A
Drain Source On State Resistance N Channel0
Drain Source On State Resistance P Channel0.012ohm
Transistor Case StyleSOP
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
7A
Drain Source On State Resistance P Channel
0.012ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
7A
Drain Source On State Resistance N Channel
0
Transistor Case Style
SOP
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000084