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Quantity | Price (inc GST) |
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1+ | S$328.940 (S$358.5446) |
5+ | S$322.370 (S$351.3833) |
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Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKM200GB12V
Order Code2423695
Technical Datasheet
IGBT ConfigurationHalf Bridge
Continuous Collector Current311A
Collector Emitter Saturation Voltage1.75V
Power Dissipation-
Operating Temperature Max175°C
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyV-IGBT
Transistor MountingPanel
Product Range-
Product Overview
The SKM200GB12V is a SEMITRANS® 3 IGBT Module for use with AC inverter drives and electronic welders. It features insulated copper base plate using DBC technology (Direct Copper Bonding) and increased power cycling capability.
- Half-bridge switch
- V-IGBT = 6th generation Trench V-IGBT (Fuji)
- CAL4 = Soft switching 4th generation CAL-diode
- Integrated gate resistor
- Lowest switching losses at high di/dt
- UL recognized, file number E63532
Applications
Power Management, Maintenance & Repair
Technical Specifications
IGBT Configuration
Half Bridge
Collector Emitter Saturation Voltage
1.75V
Operating Temperature Max
175°C
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
Continuous Collector Current
311A
Power Dissipation
-
IGBT Termination
Stud
IGBT Technology
V-IGBT
Product Range
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Slovak Republic
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Slovak Republic
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.453592