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GD100HFU120C8S
IGBT Module, Half Bridge, 154 A, 2.9 V, 791 W, 125 °C, Module
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerSTARPOWER
Manufacturer Part NoGD100HFU120C8S
Order Code3912069
Technical Datasheet
IGBT ConfigurationHalf Bridge
Continuous Collector Current154A
Collector Emitter Saturation Voltage2.9V
Power Dissipation791W
Operating Temperature Max125°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyNPT IGBT [Standard]
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Half Bridge
Collector Emitter Saturation Voltage
2.9V
Operating Temperature Max
125°C
IGBT Termination
Stud
IGBT Technology
NPT IGBT [Standard]
Product Range
-
Continuous Collector Current
154A
Power Dissipation
791W
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.2