EVLSTDRIVEG212

EVLSTDRIVEG212 is an evaluation board for STDRIVEG212 220 V high-speed half-bridge gate driver with 2.2mohm, 100V e-mode GaN HEMT. The STDRIVEG212 is a 220V high-speed half-bridge gate driver optimized for 5V driving enhanced-mode GaN HEMTs. It features separated high-current sink/source gate driving pins, integrated LDOs, undervoltage, bootstrap diode, high-side fast startup, overtemperature, fault and shutdown pins, standby to fully support hard-switching topologies. The EVLSTDRIVEG212 board is easy to use, as well as quick and suitable for evaluating the characteristics of the STDRIVEG212 driving two 2.2mohm typ, 100V emode GaN switches in a half-bridge configuration. The STDRIVEG212 comes in a 4x5mm QFN package, while GaN switches are in a 3x5mm En-FCQFN package. The EVLSTDRIVEG212 board is also suitable for evaluating the STDRIVEG612 features. It provides an onboard programmable deadtime generator and a 3.3V linear voltage regulator to supply external logic such as MCUs.

• Equipped with 2.2mohm typ, 100V e-mode GaN HEMT
• Tuneable hard-on and hard-off dV/dt
• 10.3 to 18V (12V typ.) VCC supply voltage
• Onboard adjustable deadtime generator converts one PWM into independent high- and low-side signals
• Separated inputs with external deadtime can also be used
• External bootstrap diode to achieve minimum high side start-up time
• Onboard 3.3V regulator for external circuitry supply