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SCT20N120
Silicon Carbide MOSFET, Single, N Channel, 20 A, 1.2 kV, 0.169 ohm, HiP247
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332 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$16.740 (S$18.2466) |
| 5+ | S$15.770 (S$17.1893) |
| 10+ | S$14.790 (S$16.1211) |
| 50+ | S$13.820 (S$15.0638) |
| 100+ | S$12.840 (S$13.9956) |
| 250+ | S$12.730 (S$13.8757) |
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Multiple: 1
S$16.74 (S$18.25 inc GST)
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT20N120
Order Code2807234
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id20A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.169ohm
Transistor Case StyleHiP247
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max3.5V
Power Dissipation175W
Operating Temperature Max200°C
Product Range-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
20A
Drain Source On State Resistance
0.169ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
3.5V
Operating Temperature Max
200°C
MSL
-
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
HiP247
Rds(on) Test Voltage
20V
Power Dissipation
175W
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00655