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| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$1.280 (S$1.3952) |
| 50+ | S$1.120 (S$1.2208) |
| 100+ | S$0.954 (S$1.0399) |
| 500+ | S$0.752 (S$0.8197) |
| 1000+ | S$0.685 (S$0.7466) |
Product Information
Product Overview
The STD1NK60T4 is a SuperMESH™ N-channel Power MOSFET features minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
- Extremely high dV/dt capability
- Improved ESD capability
- 100% Avalanche tested
- New high voltage benchmark
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
500mA
TO-252 (DPAK)
10V
30W
150°C
-
No SVHC (25-Jun-2025)
600V
8.5ohm
Surface Mount
3V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for STD1NK60T4
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate