Print Page
STD4NK60ZT4
Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD4NK60ZT4Copy
Manufacturer Standard Lead Time16 weeks
Order Code1291961
Your Part Number
382 In Stock
2,500 more incoming. You can reserve stock now
382 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$3.610 (S$3.9349) |
| 10+ | S$2.330 (S$2.5397) |
| 100+ | S$1.400 (S$1.526) |
| 500+ | S$1.210 (S$1.3189) |
| 1000+ | S$1.070 (S$1.1663) |
| 5000+ | S$1.050 (S$1.1445) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
S$3.61 (S$3.93 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD4NK60ZT4Copy
Manufacturer Standard Lead Time16 weeks
Order Code1291961
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id4A
Drain Source On State Resistance2ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.3V
Power Dissipation70W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STD4NK60ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
- Very low intrinsic capacitance
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
70W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
2ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00031