STF25N60M2-EP
Power MOSFET, N Channel, 600 V, 18 A, 0.175 ohm, TO-220FP, Through Hole
Need more?
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$3.800 (S$4.142) |
| 10+ | S$3.310 (S$3.6079) |
| 100+ | S$2.800 (S$3.052) |
| 250+ | S$2.660 (S$2.8994) |
| 500+ | S$2.390 (S$2.6051) |
| 1000+ | S$2.380 (S$2.5942) |
Product Information
Product Overview
STF25N60M2-EP is a N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high-frequency converters. Typical applications switching applications and tailored for very high frequency converters (f <gt/> 150KHz).
- Excellent output capacitance (COSS) profile
- Very low turn-off switching losses
- 100% avalanche tested
- Zener-protected
- 600V drain-source breakdown voltage at VGS = 0V, ID = 1mA
- 0.188ohm static drain-source on-resistance max
- 18A drain current (continuous) at TC = 25°C
- TO-220FP package
- Operating junction temperature range from -55 to 150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
18A
TO-220FP
10V
30W
150°C
-
No SVHC (25-Jun-2025)
600V
0.175ohm
Through Hole
3V
3Pins
MDmesh M2
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for STF25N60M2-EP
4 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate