Need more?
Quantity | Price (inc GST) |
---|---|
1+ | S$9.370 (S$10.2133) |
5+ | S$8.910 (S$9.7119) |
10+ | S$8.450 (S$9.2105) |
50+ | S$7.990 (S$8.7091) |
100+ | S$7.530 (S$8.2077) |
250+ | S$7.060 (S$7.6954) |
Product Information
Product Overview
The STGW40M120DF3 is a Trench gate field-stop IGBT developed using an advanced proprietary Trench gate field-stop structure. The device is part of the M series of IGBT, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and fast recovery anti-parallel diode
- 10µs Short-circuit withstand time
Applications
Industrial, Power Management, Alternative Energy, Maintenance & Repair
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
80A
468W
TO-247
175°C
-
1.85V
1.2kV
3Pins
Through Hole
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate