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STI30N65M5
Power MOSFET, N Channel, 650 V, 22 A, 0.125 ohm, TO-262, Through Hole
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No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTI30N65M5
Order Code2098264
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id22A
Drain Source On State Resistance0.125ohm
Transistor Case StyleTO-262
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation140W
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
22A
Transistor Case Style
TO-262
Rds(on) Test Voltage
10V
Power Dissipation
140W
Product Range
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.125ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.15