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GT10J303
IGBT, 600V, TO-220NIS
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoGT10J303
Order Code1300807
Technical Datasheet
Continuous Collector Current10A
Collector Emitter Saturation Voltage2.7V
Power Dissipation30W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220NIS
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Technical Specifications
Continuous Collector Current
10A
Power Dissipation
30W
Transistor Case Style
TO-220NIS
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.7V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (1)
Associated Products
5 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0019