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TK35E08N1,S1X(S
Power MOSFET, N Channel, 80 V, 55 A, 0.01 ohm, TO-220, Through Hole
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ManufacturerTOSHIBA
Manufacturer Part NoTK35E08N1,S1X(S
Order Code4173079
Also Known AsTK35E08N1, TK35E08N1,S1X
Technical Datasheet
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$2.190 (S$2.3871) |
| 10+ | S$1.430 (S$1.5587) |
| 100+ | S$1.260 (S$1.3734) |
| 500+ | S$0.866 (S$0.9439) |
| 1000+ | S$0.783 (S$0.8535) |
| 5000+ | S$0.738 (S$0.8044) |
Price for:Each
Minimum: 1
Multiple: 1
S$2.19 (S$2.39 inc GST)
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTK35E08N1,S1X(S
Order Code4173079
Also Known AsTK35E08N1, TK35E08N1,S1X
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id55A
Drain Source On State Resistance0.01ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation72W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
55A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
72W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.01ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00193