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TW092V65C,LQ(S
Silicon Carbide MOSFET, Single, N Channel, 27 A, 650 V, 0.136 ohm, DFN
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2,500 In Stock
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2500 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$21.020 (S$22.9118) |
| 5+ | S$18.540 (S$20.2086) |
| 10+ | S$15.990 (S$17.4291) |
| 50+ | S$15.080 (S$16.4372) |
| 100+ | S$14.130 (S$15.4017) |
| 250+ | S$13.530 (S$14.7477) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
S$21.02 (S$22.91 inc GST)
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTW092V65C,LQ(S
Order Code4697804
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id27A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.136ohm
Transistor Case StyleDFN
No. of Pins5Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5V
Power Dissipation111W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
27A
Drain Source On State Resistance
0.136ohm
No. of Pins
5Pins
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
DFN
Rds(on) Test Voltage
18V
Power Dissipation
111W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000175