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IRF9610PBF-BE3
Power MOSFET, P Channel, 200 V, 1.8 A, 3 ohm, TO-220AB, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$1.320 (S$1.4388) |
| 10+ | S$0.933 (S$1.017) |
| 100+ | S$0.721 (S$0.7859) |
| 500+ | S$0.574 (S$0.6257) |
| 1000+ | S$0.503 (S$0.5483) |
| 5000+ | S$0.476 (S$0.5188) |
Price for:Each
Minimum: 1
Multiple: 1
S$1.32 (S$1.44 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF9610PBF-BE3
Order Code4853582
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id1.8A
Drain Source On State Resistance3ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation20W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
1.8A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
20W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
3ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (04-Feb-2026)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.015