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IRFB9N65APBF.
Power MOSFET, N Channel, 650 V, 8.5 A, 0.93 ohm, TO-220AB, Through Hole
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No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFB9N65APBF.
Order Code9103007
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id8.5A
Drain Source On State Resistance0.93ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation167W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Dec-2014)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8.5A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
167W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Dec-2014)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.93ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2014)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002