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Quantity | Price (inc GST) |
---|---|
1+ | S$1.400 (S$1.526) |
10+ | S$0.975 (S$1.0628) |
Product Information
Product Overview
The IRL640SPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is surface-mount and capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. This package is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Logic-level gate drive
- RDS (ON) Specified at VGS = 4 and 5V
- Surface-mount
- Halogen-free
Applications
Industrial, Power Management
Technical Specifications
N Channel
17A
TO-263 (D2PAK)
5V
125W
150°C
-
Lead (21-Jan-2025)
200V
0.18ohm
Surface Mount
2V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate