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SI1967DH-T1-GE3
Dual MOSFET, P Channel, 20 V, 20 V, 1.3 A, 1.3 A, 0.64 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI1967DH-T1-GE3Copy
Manufacturer Standard Lead Time26 weeks
Order Code2335282
Your Part Number
19,759 In Stock
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19,759 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$1.010 (S$1.1009) |
| 10+ | S$0.619 (S$0.6747) |
| 100+ | S$0.399 (S$0.4349) |
| 500+ | S$0.304 (S$0.3314) |
| 1000+ | S$0.233 (S$0.254) |
| 5000+ | S$0.211 (S$0.230) |
Price for:Each
Minimum: 1
Multiple: 1
S$1.01 (S$1.10 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1967DH-T1-GE3Copy
Manufacturer Standard Lead Time26 weeks
Order Code2335282
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel1.3A
Continuous Drain Current Id P Channel1.3A
Drain Source On State Resistance N Channel0.64ohm
Drain Source On State Resistance P Channel0.64ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel1.25W
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
The SI1967DH-T1-GE3 is a dual P-channel MOSFET intended for small to medium load applications where a miniaturized package is required. It is compatible with load switch for portable applications.
- Halogen-free
- PWM optimized
Applications
Industrial, Portable Devices, Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
1.3A
Drain Source On State Resistance P Channel
0.64ohm
No. of Pins
6Pins
Power Dissipation P Channel
1.25W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
1.3A
Drain Source On State Resistance N Channel
0.64ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Alternatives for SI1967DH-T1-GE3
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005