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SI1970DH-T1-E3
Dual MOSFET, N Channel, 30 V, 1.3 A, 0.185 ohm
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1970DH-T1-E3
Order Code1497605
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel1.3A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.185ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-323
No. of Pins6Pins
Power Dissipation N Channel1.25W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
1.3A
Drain Source On State Resistance N Channel
0.185ohm
Transistor Case Style
SOT-323
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jun-2015)
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000036