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SI2302CDS-T1-E3
MOSFET, N CHANNEL, 20V, 2.6A, SOT-23-3
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3,795 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$0.584 (S$0.6366) |
| 10+ | S$0.348 (S$0.3793) |
| 100+ | S$0.315 (S$0.3434) |
| 500+ | S$0.263 (S$0.2867) |
| 1000+ | S$0.201 (S$0.2191) |
| 5000+ | S$0.175 (S$0.1908) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
S$0.58 (S$0.64 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2302CDS-T1-E3
Order Code2459409
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.6A
Drain Source On State Resistance0.045ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation710mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.6A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
710mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.045ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000043