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SI3552DV-T1-E3
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.5 A, 2.5 A, 0.085 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI3552DV-T1-E3
Order Code2646377RL
Product RangeTrenchFET Series
Technical Datasheet
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$0.677 (S$0.7379) |
| 500+ | S$0.481 (S$0.5243) |
| 1500+ | S$0.472 (S$0.5145) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
S$67.70 (S$73.79 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3552DV-T1-E3
Order Code2646377RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id2.5A
Continuous Drain Current Id N Channel2.5A
On Resistance Rds(on)0.085ohm
Continuous Drain Current Id P Channel2.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.085ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.085ohm
Gate Source Threshold Voltage Max1V
Transistor Case StyleTSOP
Power Dissipation Pd1.15W
No. of Pins6Pins
Power Dissipation N Channel1.15W
Power Dissipation P Channel1.15W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHC0
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
2.5A
Continuous Drain Current Id P Channel
2.5A
Drain Source On State Resistance N Channel
0.085ohm
Drain Source On State Resistance P Channel
0.085ohm
Transistor Case Style
TSOP
No. of Pins
6Pins
Power Dissipation P Channel
1.15W
Product Range
TrenchFET Series
Automotive Qualification Standard
-
SVHC
0
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
2.5A
On Resistance Rds(on)
0.085ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.15W
Power Dissipation N Channel
1.15W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:0
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000129