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SI4532CDY-T1-GE3
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 6 A, 6 A, 0.038 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$0.582 (S$0.6344) |
| 500+ | S$0.487 (S$0.5308) |
| 1000+ | S$0.414 (S$0.4513) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
S$58.20 (S$63.44 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4532CDY-T1-GE3
Order Code1779268RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id6A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.038ohm
Continuous Drain Current Id N Channel6A
Continuous Drain Current Id P Channel6A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.038ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.038ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
No. of Pins8Pins
Power Dissipation Pd2.78W
Power Dissipation N Channel2.78W
Power Dissipation P Channel2.78W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHC0
Product Overview
The SI4532CDY-T1-GE3 is a 30V Dual N and P-channel TrenchFET® Power MOSFET. Suitable for DC to DC converters and load switch applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
Applications
Power Management
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
6A
On Resistance Rds(on)
0.038ohm
Continuous Drain Current Id P Channel
6A
Drain Source On State Resistance N Channel
0.038ohm
Drain Source On State Resistance P Channel
0.038ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
2.78W
Power Dissipation P Channel
2.78W
Product Range
-
Automotive Qualification Standard
-
SVHC
0
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
6A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
2.78W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:0
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005