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SI7463DP-T1-GE3
Power MOSFET, P Channel, 40 V, 11 A, 0.0092 ohm, PowerPAK SO, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7463DP-T1-GE3
Order Code2295743RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id11A
Drain Source On State Resistance0.0092ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The SI7463DP-T1-GE3 is a 40VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
- Low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
11A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
1.9W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0092ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000228