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SI7882DP-T1-E3
Power MOSFET, N Channel, 12 V, 22 A, 5500 µohm, SOIC, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI7882DP-T1-E3Copy
Order Code
Re-Reel1470159RL
Cut Tape1470159
Your Part Number
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7882DP-T1-E3Copy
Order Code
Re-Reel1470159RL
Cut Tape1470159
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id22A
Drain Source On State Resistance5500µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.4V
Power Dissipation5W
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
22A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
5W
Product Range
-
Drain Source Voltage Vds
12V
Drain Source On State Resistance
5500µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.4V
Operating Temperature Max
150°C
Qualification
-
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000246