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SI7949DP-T1-E3
Dual MOSFET, P Channel, 60 V, 60 V, 3.2 A, 3.2 A, 0.051 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI7949DP-T1-E3
Order Code2101481RL
Your Part Number
Technical Datasheet
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$1.440 (S$1.5696) |
| 500+ | S$1.070 (S$1.1663) |
| 1500+ | S$1.050 (S$1.1445) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
S$144.00 (S$156.96 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7949DP-T1-E3
Order Code2101481RL
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id3.2A
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel3.2A
On Resistance Rds(on)0.051ohm
Continuous Drain Current Id P Channel3.2A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.051ohm
Drain Source On State Resistance P Channel0.051ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Transistor Case StylePowerPAK
Power Dissipation Pd1.5W
No. of Pins8Pins
Power Dissipation N Channel1.5W
Power Dissipation P Channel1.5W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI7949DP-T1-E3 is a dual P-channel MOSFET housed in a surface-mount package.
- TrenchFET® power MOSFET
- New low thermal resistance PowerPAK® package with low 1.07mm profile
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
3.2A
Continuous Drain Current Id N Channel
3.2A
Continuous Drain Current Id P Channel
3.2A
Drain Source On State Resistance N Channel
0.051ohm
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAK
No. of Pins
8Pins
Power Dissipation P Channel
1.5W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
P Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
0.051ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.051ohm
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
1.5W
Power Dissipation N Channel
1.5W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000635