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SI9424BDY-T1-GE3
Power MOSFET, P Channel, 20 V, 5.6 A, 0.014 ohm, SOIC, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI9424BDY-T1-GE3
Order Code1794809RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id5.6A
Drain Source On State Resistance0.014ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max450mV
Power Dissipation1.25W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
5.6A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.014ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
450mV
No. of Pins
8Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005