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SI9933CDY-T1-GE3
Dual MOSFET, P Channel, 20 V, 4 A
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$0.578 (S$0.630) |
| 500+ | S$0.446 (S$0.4861) |
| 1000+ | S$0.403 (S$0.4393) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
S$57.80 (S$63.00 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI9933CDY-T1-GE3
Order Code1779275RL
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id4A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.048ohm
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel4A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel-
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.048ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.4V
No. of Pins8Pins
Power Dissipation Pd3.1W
Power Dissipation N Channel-
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI9933CDY-T1-GE3 is a -20V Dual P-channel TrenchFET® Power MOSFET. Suitable for DC to DC converters and load switch applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
Applications
Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
4A
On Resistance Rds(on)
0.048ohm
Continuous Drain Current Id P Channel
4A
Drain Source On State Resistance N Channel
-
Drain Source On State Resistance P Channel
0.048ohm
Gate Source Threshold Voltage Max
1.4V
Power Dissipation Pd
3.1W
Power Dissipation P Channel
3.1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
P Channel
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
-
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000134