Print Page
SIA533EDJ-T1-GE3
Dual MOSFET, Complementary N and P Channel, 12 V, 12 V, 4.5 A, 4.5 A, 0.028 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIA533EDJ-T1-GE3Copy
Manufacturer Standard Lead Time56 weeks
Order Code
Re-Reel3772808RL
Cut Tape3772808
Product RangeTrench Series
Your Part Number
3,648 In Stock
Need more?
3,648 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Re-Reel | 1 | S$1.360 | S$1.36 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$1.360 (S$1.4824) |
| 10+ | S$0.832 (S$0.9069) |
| 100+ | S$0.541 (S$0.5897) |
| 500+ | S$0.415 (S$0.4524) |
| 1000+ | S$0.372 (S$0.4055) |
| 5000+ | S$0.331 (S$0.3608) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA533EDJ-T1-GE3Copy
Manufacturer Standard Lead Time56 weeks
Order Code
Re-Reel3772808RL
Cut Tape3772808
Product RangeTrench Series
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds12V
Drain Source Voltage Vds N Channel12V
Drain Source Voltage Vds P Channel12V
Continuous Drain Current Id4.5A
Continuous Drain Current Id N Channel4.5A
On Resistance Rds(on)0.028ohm
Continuous Drain Current Id P Channel4.5A
Drain Source On State Resistance N Channel0.028ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.028ohm
Rds(on) Test Voltage4.5V
Transistor Case StylePowerPAK SC-70
Gate Source Threshold Voltage Max400mV
No. of Pins6Pins
Power Dissipation Pd7.8W
Power Dissipation N Channel7.8W
Power Dissipation P Channel7.8W
Operating Temperature Max150°C
Product RangeTrench Series
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
12V
Drain Source Voltage Vds P Channel
12V
Continuous Drain Current Id N Channel
4.5A
Continuous Drain Current Id P Channel
4.5A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
400mV
Power Dissipation Pd
7.8W
Power Dissipation P Channel
7.8W
Product Range
Trench Series
Automotive Qualification Standard
-
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
12V
Continuous Drain Current Id
4.5A
On Resistance Rds(on)
0.028ohm
Drain Source On State Resistance N Channel
0.028ohm
Drain Source On State Resistance P Channel
0.028ohm
Transistor Case Style
PowerPAK SC-70
No. of Pins
6Pins
Power Dissipation N Channel
7.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Alternatives for SIA533EDJ-T1-GE3
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001