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SIHB080N60E-GE3
Power MOSFET, N Channel, 600 V, 35 A, 0.08 ohm, TO-263 (D2PAK), Surface Mount
1,896 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$3.850 (S$4.1965) |
| 10+ | S$3.810 (S$4.1529) |
Price for:Each
Minimum: 1
Multiple: 1
S$3.85 (S$4.20 inc GST)
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Product Information
| Manufacturer | VISHAY |
|---|---|
| Manufacturer Part No | SIHB080N60E-GE3Copy |
| Manufacturer Standard Lead Time | 42 weeks |
| Order Code | 4077834 |
| Product Range | E Series |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 600V |
| Continuous Drain Current Id | 35A |
| Drain Source On State Resistance | 0.08ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 5V |
| Power Dissipation | 227W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | E Series |
| Qualification | - |
| SVHC | Lead (07-Nov-2024) |
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 35A |
| Transistor Case Style | TO-263 (D2PAK) |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 227W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| Drain Source Voltage Vds | 600V |
|---|---|
| Drain Source On State Resistance | 0.08ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 5V |
| No. of Pins | 3Pins |
| Product Range | E Series |
| SVHC | Lead (07-Nov-2024) |
Technical Docs (2)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Israel Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | Lead (07-Nov-2024) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .002 |