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SIZ342DDT-T1-GE3
Dual MOSFET, Dual N Channel, 30 V, 33.6 A, 0.0092 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$0.507 (S$0.5526) |
| 500+ | S$0.413 (S$0.4502) |
| 1000+ | S$0.374 (S$0.4077) |
| 5000+ | S$0.340 (S$0.3706) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
S$50.70 (S$55.26 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ342DDT-T1-GE3
Order Code4541165RL
Technical Datasheet
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id N Channel33.6A
Drain Source On State Resistance N Channel0.0092ohm
No. of Pins8Pins
Power Dissipation N Channel16.7W
Operating Temperature Max150°C
SVHCLead (07-Nov-2024)
Technical Specifications
Drain Source Voltage Vds N Channel
30V
Drain Source On State Resistance N Channel
0.0092ohm
Power Dissipation N Channel
16.7W
SVHC
Lead (07-Nov-2024)
Continuous Drain Current Id N Channel
33.6A
No. of Pins
8Pins
Operating Temperature Max
150°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001