Print Page
SIZF660LDT-T1-GE3
Dual MOSFET, Dual N Channel, 60 V, 110 A, 0.0026 ohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Notify me when back in stock
| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$2.010 (S$2.1909) |
| 500+ | S$1.870 (S$2.0383) |
| 1000+ | S$1.720 (S$1.8748) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
S$201.00 (S$219.09 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZF660LDT-T1-GE3
Order Code4644769RL
Technical Datasheet
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id N Channel110A
Drain Source On State Resistance N Channel0.0026ohm
No. of Pins8Pins
Power Dissipation N Channel62.5W
Operating Temperature Max150°C
Technical Specifications
Drain Source Voltage Vds N Channel
60V
Drain Source On State Resistance N Channel
0.0026ohm
Power Dissipation N Channel
62.5W
Continuous Drain Current Id N Channel
110A
No. of Pins
8Pins
Operating Temperature Max
150°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001