Print Page
SQ1922EEH-T1_GE3
Dual MOSFET, N Channel, 20 V, 20 V, 840 mA, 840 mA, 0.2 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQ1922EEH-T1_GE3
Order Code3470706RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
605 In Stock
Need more?
605 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$0.429 (S$0.4676) |
| 500+ | S$0.292 (S$0.3183) |
| 1500+ | S$0.287 (S$0.3128) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
S$42.90 (S$46.76 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ1922EEH-T1_GE3
Order Code3470706RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id840mA
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.2ohm
Continuous Drain Current Id N Channel840mA
Continuous Drain Current Id P Channel840mA
Drain Source On State Resistance N Channel0.2ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.2ohm
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Transistor Case StyleSC-70
Power Dissipation Pd1.5W
No. of Pins6Pins
Power Dissipation N Channel1.5W
Power Dissipation P Channel1.5W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
840mA
On Resistance Rds(on)
0.2ohm
Continuous Drain Current Id P Channel
840mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SC-70
No. of Pins
6Pins
Power Dissipation P Channel
1.5W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
840mA
Drain Source On State Resistance N Channel
0.2ohm
Drain Source On State Resistance P Channel
0.2ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.5W
Power Dissipation N Channel
1.5W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001