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SQUN702E-T1_GE3
Dual MOSFET, Complementary N and P Channel, N Channel, 200 V, 200 V, 30 A, 30 A, 7700 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQUN702E-T1_GE3
Order Code3128862RL
Product RangeTrenchFET Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 26 week(s)
Notify me when back in stock
| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$3.300 (S$3.597) |
| 500+ | S$2.920 (S$3.1828) |
| 1000+ | S$2.510 (S$2.7359) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
S$330.00 (S$359.70 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQUN702E-T1_GE3
Order Code3128862RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeComplementary N and P Channel, N Channel
Transistor PolarityComplementary N and P Channel, N Channel
Drain Source Voltage Vds200V
Drain Source Voltage Vds N Channel200V
Continuous Drain Current Id30A
Drain Source Voltage Vds P Channel200V
On Resistance Rds(on)0.0077ohm
Continuous Drain Current Id N Channel30A
Continuous Drain Current Id P Channel30A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel7700µohm
Drain Source On State Resistance P Channel7700µohm
Rds(on) Test Voltage10V
Transistor Case Style-
Gate Source Threshold Voltage Max3V
Power Dissipation Pd60W
No. of Pins10Pins
Power Dissipation N Channel60W
Power Dissipation P Channel60W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHC0
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
Complementary N and P Channel, N Channel
Drain Source Voltage Vds
200V
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.0077ohm
Continuous Drain Current Id P Channel
30A
Drain Source On State Resistance N Channel
7700µohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
10Pins
Power Dissipation P Channel
60W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
SVHC
0
Transistor Polarity
Complementary N and P Channel, N Channel
Drain Source Voltage Vds N Channel
200V
Drain Source Voltage Vds P Channel
200V
Continuous Drain Current Id N Channel
30A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
7700µohm
Transistor Case Style
-
Power Dissipation Pd
60W
Power Dissipation N Channel
60W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:0
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000242