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VS-FB180SA10P
MOSFET Transistor, N Channel, 180 A, 100 V, 6500 µohm, 10 V
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ManufacturerVISHAY
Manufacturer Part NoVS-FB180SA10P
Order Code1611466
Your Part Number
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoVS-FB180SA10P
Order Code1611466
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id180A
Drain Source Voltage Vds100V
Drain Source On State Resistance6500µohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max-
Power Dissipation480W
Operating Temperature Max150°C
Product Range-
Product Overview
The VS-FB180SA10P is a 5th generation high current density N channel Power MOSFET is paralleled into a compact, high power module providing the best combination of switching, ruggedized design, very low on-resistance and cost effectiveness.
- Easy to use and parallel
- Dynamic dv/dt rating
- Fully avalanche rated
- Simple drive requirements
- Low drain to case capacitance
- Low internal inductance
Applications
Industrial, Commercial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Rds(on) Test Voltage
10V
Power Dissipation
480W
Product Range
-
Continuous Drain Current Id
180A
Drain Source On State Resistance
6500µohm
Gate Source Threshold Voltage Max
-
Operating Temperature Max
150°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.036515