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WMSC006H12B2P6T
Silicon Carbide MOSFET, Half Bridge, N Channel, 200 A, 1.2 kV, 0.01 ohm, WeEnPACK-B2
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ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoWMSC006H12B2P6T
Order Code4697775
Technical Datasheet
14 In Stock
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14 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$281.790 (S$307.1511) |
| 5+ | S$246.570 (S$268.7613) |
| 10+ | S$204.300 (S$222.687) |
| 50+ | S$183.160 (S$199.6444) |
Price for:Each
Minimum: 1
Multiple: 1
S$281.79 (S$307.15 inc GST)
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Product Information
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoWMSC006H12B2P6T
Order Code4697775
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id200A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.01ohm
Transistor Case StyleWeEnPACK-B2
No. of Pins36Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max3.5V
Power Dissipation278W
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
200A
Drain Source On State Resistance
0.01ohm
No. of Pins
36Pins
Gate Source Threshold Voltage Max
3.5V
Operating Temperature Max
150°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
WeEnPACK-B2
Rds(on) Test Voltage
18V
Power Dissipation
278W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001