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CAS120M12BM2
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 193 A, 1.2 kV, 0.013 ohm, Module
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| Quantity | Price (inc GST) |
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| 1+ | S$822.860 (S$896.9174) |
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Product Information
ManufacturerWOLFSPEED
Manufacturer Part NoCAS120M12BM2
Order Code2630836
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id193A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.013ohm
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.6V
Power Dissipation925W
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (17-Dec-2015)
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Product Overview
Applications
Medical
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
193A
Drain Source On State Resistance
0.013ohm
No. of Pins
-
Gate Source Threshold Voltage Max
2.6V
Operating Temperature Max
150°C
SVHC
No SVHC (17-Dec-2015)
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
20V
Power Dissipation
925W
Product Range
-
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.345637