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XP3N1R8MT
Power MOSFET, N Channel, 30 V, 165 A, 0.00189 ohm, PMPAK, Surface Mount
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ManufacturerYAGEO XSEMI
Manufacturer Part NoXP3N1R8MT
Order Code4168921
Product RangeXP3N1R8 Series
Technical Datasheet
195 In Stock
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195 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$1.740 (S$1.8966) |
| 10+ | S$1.370 (S$1.4933) |
| 100+ | S$0.939 (S$1.0235) |
| 500+ | S$0.807 (S$0.8796) |
| 1000+ | S$0.623 (S$0.6791) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
S$1.74 (S$1.90 inc GST)
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Product Information
ManufacturerYAGEO XSEMI
Manufacturer Part NoXP3N1R8MT
Order Code4168921
Product RangeXP3N1R8 Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id165A
Drain Source On State Resistance0.00189ohm
Transistor Case StylePMPAK
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeXP3N1R8 Series
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
165A
Transistor Case Style
PMPAK
Rds(on) Test Voltage
10V
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.00189ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
XP3N1R8 Series
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001