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FDMA1028NZ
Dual MOSFET, N Channel, 20 V, 3.7 A, 0.068 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$1.540 (S$1.6786) |
| 10+ | S$0.949 (S$1.0344) |
| 100+ | S$0.753 (S$0.8208) |
| 500+ | S$0.565 (S$0.6158) |
| 3000+ | S$0.557 (S$0.6071) |
| 9000+ | S$0.548 (S$0.5973) |
| 24000+ | S$0.539 (S$0.5875) |
| 45000+ | S$0.530 (S$0.5777) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
S$7.70 (S$8.39 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMA1028NZ
Order Code1324789
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel3.7A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.068ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleµFET
No. of Pins8Pins
Power Dissipation N Channel1.4W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDMA1028NZ is a dual N-channel PowerTrench® MOSFET designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It has two independent N-channel MOSFETs with low ON-state resistance for minimum conduction losses. When connected in the typical common source configuration, bidirectional current flow is possible. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
- Low profile
- Halogen-free
- ±12V Gate to source voltage
- 3.7A Continuous drain current
- 6A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
3.7A
Drain Source On State Resistance N Channel
0.068ohm
Transistor Case Style
µFET
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005