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FDMA1028NZ
Dual MOSFET, N Channel, 20 V, 3.7 A, 0.068 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$0.753 (S$0.8208) |
| 500+ | S$0.565 (S$0.6158) |
| 3000+ | S$0.557 (S$0.6071) |
| 9000+ | S$0.548 (S$0.5973) |
| 24000+ | S$0.539 (S$0.5875) |
| 45000+ | S$0.530 (S$0.5777) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
S$75.30 (S$82.08 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMA1028NZ
Order Code1324789RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id3.7A
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)0.068ohm
Continuous Drain Current Id N Channel3.7A
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.068ohm
Rds(on) Test Voltage1V
Drain Source On State Resistance P Channel-
Transistor Case StyleµFET
Gate Source Threshold Voltage Max1V
No. of Pins8Pins
Power Dissipation Pd1.4W
Power Dissipation N Channel1.4W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDMA1028NZ is a dual N-channel PowerTrench® MOSFET designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It has two independent N-channel MOSFETs with low ON-state resistance for minimum conduction losses. When connected in the typical common source configuration, bidirectional current flow is possible. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
- Low profile
- Halogen-free
- ±12V Gate to source voltage
- 3.7A Continuous drain current
- 6A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
3.7A
On Resistance Rds(on)
0.068ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.068ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.4W
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
3.7A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
1V
Transistor Case Style
µFET
No. of Pins
8Pins
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005